Numerical calculation of Pollutant gas CO diffusion rate in SiC synthesis process

Document Type : Original Article

Author

alley13,artesh street

Abstract

SiC is a durable and suitable material. Today, with the increase in demand, the production of this material has increased, and as a result, a huge volume of CO gas is produced. A common method for cost-effective and economical production of SiC is the Acheson method, which causes pollutants to enter the environment and thus increase air pollution. There are many methods for estimating gas diffusion rates. In this research, for the first time, MATLAB software has been used to calculate the CO gas diffusion rate during the SiC production process using the Acheson reactor method. First, the properties of the substrate and temperature changes are studied and then the process of SiC and CO production process is depicted. Studies show that the bed temperature needs to reach the desired value to start the reaction due to electrical resistance in the graphite core. With the start of the SiC production reaction, the bed porosity increases due to carbon consumption and CO gas is produced at the same time. As the reaction progresses, the amount of this gas inside the reactor increases and a current is generated towards the outlet valve, reducing the CO gas inside the reactor.

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